r07ds0847ej0100 rev.1.00 page 1 of 8 jul 17, 2012 preliminary datasheet rjq6008dpm 600v - 10a - igbt and diode high speed power switching features ? low collector to emitter saturation voltage v ce(sat) = 2.65 v typ. (i c = 25 a, v ge = 15 v, ta = 25c) ? built in fast recovery diode in one package ? trench gate and thin wafer technology ? high speed switching outline 1. nc 2. cathode 3. anode, collecto r 4. emitter 5. gate diode igbt 1 2 3 4 5 2 5 3 4 renesas package code: prss0005zb-a (package name: to-3pfm-5) absolute maximum ratings igbt (tc = 25c) item symbol ratings unit collector to emitter voltage v ces 600 v gate to emitter voltage v ges 30 v tc = 25 c i c note1 20 a collector current tc = 100 c i c note1 10 a collector peak current i c(peak) note3 100 a collector dissipation p c note2 48 w junction to case thermal impedance ? j-c 2.3 c/w junction temperature tj 150 c storage temperature tstg ?55 to +150 c notes: 1. limited by tj max. 2. value at tc = 25c 3. pulse width limited by maximum safe operating area. r07ds0847ej0100 rev.1.00 jul 17, 2012
rjq6008dpm preliminary r07ds0847ej0100 rev.1.00 page 2 of 8 jul 17, 2012 diode (tc = 25c) item symbol ratings unit maximum reverse voltage v rm 600 v average rectified forward current i o 20 a pw = 10 ms i fsm note4 100 a peak surge forward current pw = 1 ms i fsm note5 190 a junction to case thermal impedance ? j-cd 3.0 c/w junction temperature tj 150 ? c storage temperature tstg ?55 to +150 ? c notes: 4. 50hz sine half wave, non -repetitive 1 cycle value, tj = 25 ? c. 5. pw = 1ms sine half wave, non-repetitive peak value, tj = 25 ? c. electrical characteristics igbt (tj = 25c) item symbol min typ max unit test conditions zero gate voltage collector current i ces ? ? 10 ? a v ce = 600 v, v ge = 0 gate to emitter leak current i ges ? ? 1 ? a v ge = 30 v, v ce = 0 gate to emitter cutoff voltage v ge(off) 3.0 ? 5.5 v v ce = 10 v, i c = 1 ma v ce(sat) ? 2.65 3.5 v i c = 25 a, v ge = 15 v note6 collector to emitte r saturation voltage v ce(sat) ? 3.2 ? v i c = 50 a, v ge = 15 v note6 input capacitance cies ? 1800 ? pf output capacitance coes ? 200 ? pf reveres transfer capacitance cres ? 16 ? pf v ce = 25 v v ge = 0 f = 1 mhz t d(on) ? 48 ? ns t r ? 68 ? ns t d(off) ? 95 ? ns switching time t f ? 55 ? ns i c = 30 a, resistive load v cc = 300 v v ge = 15 v rg = 5 ? notes: 6. pulse test diode (tj = 25c) item symbol min typ max unit test conditions forward voltage v f ? 1.2 1.8 v i f = 20 a reverse current i r ? ? 10 ? a v r = 600 v reverse recovery time t rr ? 100 ? ns frd reverse recovery charge q rr ? 0.29 ? ? c frd peak reverse recovery current i rr ? 5.9 ? a i f = 20 a di/dt = ?100 a/ ? s
rjq6008dpm preliminary r07ds0847ej0100 rev.1.00 page 3 of 8 jul 17, 2012 main characteristics igbt 0 20 60 40 80 100 1 2 6 4 5 3 7 typical output characteristics typical transfer characteristics 1234 6 5 ta = 2 5 c pulse test collector current i c (a) collector current i c (a) collector current i c (a) maximum safe operation area 1000 100 10 0.1 1 10 100 1 0.01 0.1 0.001 1000 0 20 40 60 100 80 12 0 246810 pw = 10 s 2 0 4 6 8 4 8 12 20 16 collector to emitter saturation voltage vs. gate to emitter voltage (typical) collector to emitter saturation voltage v ce(sat) (v) 20 a 25 a 10 a i c = 50 a v ge = 6.4 v 8 v 6.8 v 7.2 v 7.6 v ta = 2 5 c pulse test v ce = 10 v pulse test collector to emitter voltage v ce (v) collector to emitter voltage v ce (v) gate to emitter voltage v ge (v) gate to emitter voltage v ge (v) ta = 2 5 c 1 shot pulse 25c ?25 c ta = 7 5 c 8.4 v 9 v 10 v 15 v 13 v collector to emitter saturation voltage vs. junction temparature (typical) collector to emitter saturation voltage v ce(sat) (v) junction temparature tj ( c) gate to emitter cutoff voltage vs. junction temparature (typical) gate to emitter cutoff voltage v ge(off) (v) junction temparature tj ( c) ? 25 0 25 75 125 50 100 150 v ge = 15 v pulse test 50 a 25 a 20 a 10 a i c = 100 a 0 2 6 4 8 10 ? 25 0 25 75 125 50 100 150 v ce = 10 v pulse test 1 ma i c = 10 ma
rjq6008dpm preliminary r07ds0847ej0100 rev.1.00 page 4 of 8 jul 17, 2012 capacitance c (pf) 1 10 100 1000 10000 0 50 100 150 200 250 cies coes cres gate charge qg (nc) dynamic input characteristics (typical) typical capacitance vs. collector to emitter voltage 800 600 400 200 0 0 16 12 8 4 0 20 40 60 80 100 i c = 50 a ta = 2 5 c v ge v ce v cc = 480 v 300 v 100 v v cc = 480 v 300 v 100 v v ge = 0 v f = 1 mhz ta = 25 c collector to emitter voltage v ce (v) collector to emitter voltage v ce (v) gate to emitter voltage v ge (v) diode forward current i f (a) 0 20 40 60 80 100 0123 4 v ge = 0 v ta = 25 c pulse test c-e diode forward voltage v cef (v) forward current vs. forward voltage (typical) di/dt (a/ s) reverse recovery time t rr (ns) reverse recovery time vs. di/dt (typical) 0 80 160 40 120 200 40 80 120 160 200 0 i f = 30 a ta = 25 c 0.1 1 10 100 1000 reverse voltage v r (v) capaitace cj (pf) capacitance vs. reverse voltage (typical) 1 10 100 1000 f = 1 mhz tc = 25 c
rjq6008dpm preliminary r07ds0847ej0100 rev.1.00 page 5 of 8 jul 17, 2012 100 1000 10 switching characteristics (typical) (5) 110 100 gate resistance rg ( ) (inductive load) 100 1000 10 switching characteristics (typical) (3) switching times t (ns) t d(off) t d(on) t f t r 1 10 100 collector current i c (a) (inductive load) switching characteristics (typical) (1) switching times t (ns) t d(off) t d(on) t f t r v cc = 300 v, v ge = 15 v rg = 5 , tj = 25 c t r includes the diode recovery collector current i c (a) (inductive load) 110 100 1 10000 1000 100 10 swithing energy losses e ( j) switching characteristics (typical) (2) gate resistance rg ( ) (inductive load) 110 100 10000 1000 100 swithing energy losses e ( j) switching characteristics (typical) (4) v cc = 300 v, v ge = 15 v i c = 50 a, tj = 25 c eon includes the diode recovery switching characteristics (typical) (6) 10000 1000 100 50 25 150 75 125 100 junction temperature tj (c) (inductive load) swithing energy losses e ( j) v cc = 300 v, v ge = 15 v i c = 50 a, rg = 5 eon includes the diode recovery eon eoff junction temperature tj (c) (inductive load) 100 1000 10 50 25 150 75 125 100 switching times t (ns) v cc = 300 v, v ge = 15 v i c = 50 a, rg = 5 t r includes the diode recovery eoff eon eoff eon t d(on) t r t f t d(off) v cc = 300 v, v ge = 15 v rg = 5 , tj = 25 c eon includes the diode recovery v cc = 300 v, v ge = 15 v i c = 50 a, tj = 25 c t r includes the diode recovery
rjq6008dpm preliminary r07ds0847ej0100 rev.1.00 page 6 of 8 jul 17, 2012 pu l se w i dth pw (s) n orma li zed t rans i ent t herma l i mpedance s (t) n orma li zed t rans i ent t herma l i mpedance s (t) n orma li zed t rans i ent t herma l i mpedance vs . pu l se w i dth ( i gb t ) pu l se w i dth pw (s) n orma li zed t rans i ent t herma l i mpedance vs . pu l se w i dth (d i ode) 0 . 01 0 . 1 10 1 100 1 m10 m 100 m1 10 p dm pw t d = pw t j ? c(t) = s (t) ? j ? c j ? c = 2 . 3 c / w, t c = 25 c t c = 25 c 0 . 01 1 0 . 1 10 100 1 m10 m 100 m1 10 100 100 p dm pw t d = pw t j ? c(t) = s (t) ? j ? c j ? c = 3 c / w, t c = 25 c 0 . 05 0 . 2 0 . 1 0 . 5 d = 1 t c = 25 c 0 . 01 0 . 02 1 shot pu l se 0 . 05 0 . 2 0 . 1 0 . 5 d = 1 0 . 02 0 . 01 1 shot pu l se
rjq6008dpm preliminary r07ds0847ej0100 rev.1.00 page 7 of 8 jul 17, 2012 switching time test circuit diode reverse recovery time test circuit waveform d.u.t v cc t rr i rr di f /dt 0.9 i rr i f i f rg 0.5 i rr l 0 waveform diode clamp d.u.t rg l v cc t d(off) t off t on t d(on) t f t r t tail 90% 90% 90% 10% 10% 10% 10% 1% v ge i c v ce
rjq6008dpm preliminary r07ds0847ej0100 rev.1.00 page 8 of 8 jul 17, 2012 package dimensions prev i ous code prss0005zb - a t o - 3p f m - 5 mass [t yp .] 5 . 3g sc - 93 un i t : mm 2 . 725 19 . 7 0 . 519 . 9 0 . 3 5 . 0 0 . 3 2 . 0 0 . 3 5 . 5 0 . 3 3 . 2 0 . 3 3 . 2 15 . 6 0 . 3 + 0 .4 ? 0 . 2 1 .4 0 0 . 86 2 . 25 0 . 3 5 . 0 0 . 3 0 . 66 + 0 . 2 ? 0 . 1 2 . 725 0 . 9 + 0 . 2 ? 0 . 1 r ene sas code j eit a package code package n ame t o - 3p f m - 5 ordering information orderable part number quan tity shipping container rjq6008dpm-00#t0 360 pcs box (tube)
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